发明授权
- 专利标题: Measurement of CMOS device channel strain by X-ray diffraction
- 专利标题(中): 通过X射线衍射测量CMOS器件通道应变
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申请号: US12967323申请日: 2010-12-14
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公开(公告)号: US08716037B2公开(公告)日: 2014-05-06
- 发明人: Thomas N. Adam , Stephen W. Bedell , Eric C. Harley , Judson R. Holt , Anita Madan , Conal E. Murray , Teresa L. Pinto
- 申请人: Thomas N. Adam , Stephen W. Bedell , Eric C. Harley , Judson R. Holt , Anita Madan , Conal E. Murray , Teresa L. Pinto
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 主分类号: G01R31/26
- IPC分类号: G01R31/26 ; H01L21/66
摘要:
A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.