Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof

Invention Grant

US08721833B2 Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof 有权

Title translation: 包含铁电材料的可变电容室部件及其制造和使用方法

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Patent Title: Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
Patent Title (中): 包含铁电材料的可变电容室部件及其制造和使用方法
Application No.: US13366341

Application Date: 2012-02-05
Publication No.: US08721833B2

Publication Date: 2014-05-13
Inventor: Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
Applicant: Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
Applicant Address: JP Minato-Ku, Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Minato-Ku, Tokyo
Main IPC: H01L21/306
IPC: H01L21/306

Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof

Abstract:

A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

Abstract(Chinese):

描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

Public/Granted literature

US20130203258A1 VARIABLE CAPACITANCE CHAMBER COMPONENT INCORPORATING FERROELECTRIC MATERIALS AND METHODS OF MANUFACTURING AND USING THEREOF Public/Granted day:2013-08-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）