公开(公告)号：US08486798B1

公开(公告)日：2013-07-16

申请号：US13366340

申请日：2012-02-05

申请人： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

发明人： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H01L21/20 ,  H01L29/93 ,  H01L21/306

CPC分类号： H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US08721833B2

公开(公告)日：2014-05-13

申请号：US13366341

申请日：2012-02-05

申请人： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

发明人： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H01L21/306

CPC分类号： H01J37/32495 ,  H01J37/32504

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

公开(公告)号：US10395903B2

公开(公告)日：2019-08-27

申请号：US15983532

申请日：2018-05-18

申请人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

发明人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC分类号： H01J37/32 ,  C23C16/50 ,  H01J37/30

摘要： A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US20180269041A1

公开(公告)日：2018-09-20

申请号：US15983532

申请日：2018-05-18

申请人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

发明人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC分类号： H01J37/32 ,  H01J37/30

CPC分类号： H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

摘要： A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：USD993820S1

公开(公告)日：2023-08-01

申请号：US29861422

申请日：2022-11-29

申请人： Zhiying Chen

设计人： Zhiying Chen

摘要： FIG. 1 is a front perspective view of a chain, showing my new design;
FIG. 2 is a rear perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a rear view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The broken lines in the drawings illustrate the portions of the chain that form no part of the claimed design.

公开(公告)号：USD974948S1

公开(公告)日：2023-01-10

申请号：US29855471

申请日：2022-10-03

申请人： Zhiying Chen

设计人： Zhiying Chen