Invention Grant
- Patent Title: Controlling defects in thin wafer handling
- Patent Title (中): 控制薄晶片处理中的缺陷
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Application No.: US12841874Application Date: 2010-07-22
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Publication No.: US08722540B2Publication Date: 2014-05-13
- Inventor: Yu-Liang Lin , Weng-Jin Wu , Jing-Cheng Lin
- Applicant: Yu-Liang Lin , Weng-Jin Wu , Jing-Cheng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covered by the wafer is not removed.
Public/Granted literature
- US20120021604A1 Controlling Defects in Thin Wafer Handling Public/Granted day:2012-01-26
Information query
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