Invention Grant
US08723250B2 Integrated circuit devices including complex dielectric layers and related fabrication methods
有权
集成电路器件包括复杂的电介质层和相关的制造方法
- Patent Title: Integrated circuit devices including complex dielectric layers and related fabrication methods
- Patent Title (中): 集成电路器件包括复杂的电介质层和相关的制造方法
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Application No.: US13042871Application Date: 2011-03-08
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Publication No.: US08723250B2Publication Date: 2014-05-13
- Inventor: Jong-cheol Lee , Ki-yeon Park , Chun-hyung Chung , Cha-young Yoo
- Applicant: Jong-cheol Lee , Ki-yeon Park , Chun-hyung Chung , Cha-young Yoo
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2010-0023404 20100316
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L49/02
Abstract:
An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.
Public/Granted literature
- US20110227143A1 INTEGRATED CIRCUIT DEVICES INCLUDING COMPLEX DIELECTRIC LAYERS AND RELATED FABRICATION METHODS Public/Granted day:2011-09-22
Information query
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