Crystal growth method for nitride semiconductor having a multiquantum well structure

Invention Grant

US08728237B2 Crystal growth method for nitride semiconductor having a multiquantum well structure 有权

Title translation: 具有多量子阱结构的氮化物半导体的晶体生长方法

Patent Title: Crystal growth method for nitride semiconductor having a multiquantum well structure
Patent Title (中): 具有多量子阱结构的氮化物半导体的晶体生长方法
Application No.: US12874594

Application Date: 2010-09-02
Publication No.: US08728237B2

Publication Date: 2014-05-20
Inventor: Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
Applicant: Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2010-032630 20100217
Main IPC: C30B25/02
IPC: C30B25/02

Abstract:

A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0

Abstract(Chinese):

一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

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IPC分类:

C	化学；冶金
C30	晶体生长
C30B	单晶生长（用超高压的，例如用于金刚石形成的入B01J3/06）；共晶材料的定向凝固或共析材料的定向分层；材料的区熔精炼（金属或合金的区熔精炼入C22B）；具有一定结构的均匀多晶材料的制备（金属铸造，按同样工艺或装置的其他物质铸造入B22D；塑料的加工入B29；改变金属或合金的物理结构入C21D、C22F）；单晶或具有一定结构的均匀多晶材料；单晶或具有一定结构的均匀多晶材料之后处理（用于半导体器件或元件生产的入H01L）；其所用的装置
C30B25/00	反应气体化学反应法的单晶生长，例如化学气相沉积生长
C30B25/02	.外延层生长