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    Method for manufacturing a semiconductor light emitting device
    3.
    发明授权
    Method for manufacturing a semiconductor light emitting device 有权
    半导体发光元件的制造方法

    公开(公告)号：US08093083B1

    公开(公告)日：2012-01-10

    申请号：US13029416

    申请日：2011-02-17

    申请人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

    摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.

    摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法。 该器件包括包含氮化物半导体的晶体层。 晶体层含有In和Ga原子。 该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。 晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。 第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。 （1-1 / xv）/（1-1 / xs）小于0.1。

    Semiconductor light emitting device and method of manufacturing the same
    7.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08399896B2

    公开(公告)日：2013-03-19

    申请号：US12875503

    申请日：2010-09-03

    申请人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    IPC分类号： H01L33/30 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

    摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110204394A1

    公开(公告)日：2011-08-25

    申请号：US12875503

    申请日：2010-09-03

    申请人： Toshiki HIKOSAKA ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    发明人： Toshiki HIKOSAKA ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    IPC分类号： H01L33/30 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

    摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0

    Semiconductor light emitting device
    9.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08610106B2

    公开(公告)日：2013-12-17

    申请号：US13213821

    申请日：2011-08-19

    申请人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L33/06

    CPC分类号： H01L33/40 ,  H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

    Method for manufacturing nitride semiconductor device
    10.
    发明授权
    Method for manufacturing nitride semiconductor device 有权
    氮化物半导体器件的制造方法

    公开(公告)号：US08809085B2

    公开(公告)日：2014-08-19

    申请号：US13222238

    申请日：2011-08-31

    申请人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L33/22

    CPC分类号： H01L33/0079 ,  H01L33/22

    摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

    摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。