Invention Grant
- Patent Title: Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing
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Application No.: US13547856Application Date: 2012-07-12
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Publication No.: US08728879B2Publication Date: 2014-05-20
- Inventor: Bob Kong , Tony Chiang , Chi-I Lang , Zhi-Wen Wen Sun , Jinhong Tong
- Applicant: Bob Kong , Tony Chiang , Chi-I Lang , Zhi-Wen Wen Sun , Jinhong Tong
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
Public/Granted literature
- US20120295436A1 FORMATION OF A ZINC PASSIVATION LAYER ON TITANIUM OR TITANIUM ALLOYS USED IN SEMICONDUCTOR PROCESSING Public/Granted day:2012-11-22
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