Invention Grant
- Patent Title: Method for producing epitaxial silicon wafer
- Patent Title (中): 外延硅晶片的制造方法
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Application No.: US13390764Application Date: 2010-08-20
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Publication No.: US08728942B2Publication Date: 2014-05-20
- Inventor: Shinichi Ogata , Kazushige Takaishi , Hironori Nishimura , Shigeru Okuuchi , Shunsuke Mikuriya , Yuichi Nakayoshi
- Applicant: Shinichi Ogata , Kazushige Takaishi , Hironori Nishimura , Shigeru Okuuchi , Shunsuke Mikuriya , Yuichi Nakayoshi
- Applicant Address: JP Tokyo
- Assignee: Sumico Corporation
- Current Assignee: Sumico Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2009-192450 20090821; JP2009-192451 20090821
- International Application: PCT/JP2010/064076 WO 20100820
- International Announcement: WO2011/021691 WO 20110224
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.
Public/Granted literature
- US20120156878A1 METHOD FOR PRODUCING EPITAXIAL SILICON WAFER Public/Granted day:2012-06-21
Information query
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