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公开(公告)号：US08728942B2
公开(公告)日：2014-05-20
申请号：US13390764
申请日：2010-08-20
申请人： Shinichi Ogata , Kazushige Takaishi , Hironori Nishimura , Shigeru Okuuchi , Shunsuke Mikuriya , Yuichi Nakayoshi
发明人： Shinichi Ogata , Kazushige Takaishi , Hironori Nishimura , Shigeru Okuuchi , Shunsuke Mikuriya , Yuichi Nakayoshi
IPC分类号： H01L21/302
CPC分类号： H01L21/02024
摘要： Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.
摘要翻译： 使用由包含水溶性聚合物的无磨粒的碱性溶液构成的抛光液对硅晶片的前表面进行镜面抛光，简化了抛光工艺，从而导致生产率的提高和成本的降低，降低了密度 LPD可归因于处理并发生在镜面抛光晶片的前表面，从而提高了晶片正面的表面粗糙度。
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公开(公告)号：US20120156878A1
公开(公告)日：2012-06-21
申请号：US13390764
申请日：2010-08-20
申请人： Shinichi Ogata , Kazushige Takaishi , Hironori Nishimura , Shigeru Okuuchi , Shunsuke Mikuriya , Yuichi Nakayoshi
发明人： Shinichi Ogata , Kazushige Takaishi , Hironori Nishimura , Shigeru Okuuchi , Shunsuke Mikuriya , Yuichi Nakayoshi
IPC分类号： H01L21/306
CPC分类号： H01L21/02024
摘要： Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.
摘要翻译： 使用由包含水溶性聚合物的无磨粒的碱性溶液构成的抛光液对硅晶片的前表面进行镜面抛光，简化了抛光工艺，从而导致生产率的提高和成本的降低，降低了密度 LPD可归因于处理并发生在镜面抛光晶片的前表面，从而提高了晶片正面的表面粗糙度。
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公开(公告)号：US08900033B2
公开(公告)日：2014-12-02
申请号：US13261294
申请日：2010-11-30
申请人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
发明人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B37/013 , B24B37/042 , B24B37/08
摘要： An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished.The method is a wafer polishing method in which wafers 20 are polished by supplying a polishing solution to surfaces 30a of a pair of polishing pads 30 positioned above and below carriers 10 each having a circular hole 11 for retaining the wafers 20, the carriers 10 being thinner than the wafers 20; and sliding the polishing pads 30 relatively to the carriers 10, thereby simultaneously polishing both surfaces of the wafers 20 retained in the carriers 10. The method is characterized in that information sourced from the carriers 10 when a difference between the thickness of the carriers 10 and the thickness of the wafers 20 reaches a predetermined value is detected to calculate the thickness of the wafers 20, thereby terminating polishing.
摘要翻译： 本发明的目的是提供一种抛光硅晶片的方法，其能够抑制来自载体的不期望的声音的产生并且减少抛光后晶片的厚度变化。 该方法是晶片抛光方法，其中通过将抛光溶液提供给位于载体10上方和下方的一对抛光垫30的表面30a进行研磨，每个抛光垫具有用于保持晶片20的圆形孔11，载体10为 比晶片20薄; 并且相对于载体10滑动抛光垫30，从而同时抛光保留在载体10中的晶片20的两个表面。该方法的特征在于，当载体10的厚度和载体10的厚度之间的差异 检测晶片20的厚度达到预定值，以计算晶片20的厚度，从而终止抛光。
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公开(公告)号：US20130017763A1
公开(公告)日：2013-01-17
申请号：US13261294
申请日：2010-11-30
申请人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
发明人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
IPC分类号： B24B37/013
CPC分类号： H01L21/02024 , B24B37/013 , B24B37/042 , B24B37/08
摘要： An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished.The method is a wafer polishing method in which wafers 20 are polished by supplying a polishing solution to surfaces 30a of a pair of polishing pads 30 positioned above and below carriers 10 each having a circular hole 11 for retaining the wafers 20, the carriers 10 being thinner than the wafers 20; and sliding the polishing pads 30 relatively to the carriers 10, thereby simultaneously polishing both surfaces of the wafers 20 retained in the carriers 10. The method is characterized in that information sourced from the carriers 10 when a difference between the thickness of the carriers 10 and the thickness of the wafers 20 reaches a predetermined value is detected to calculate the thickness of the wafers 20, thereby terminating polishing.
摘要翻译： 本发明的目的是提供一种抛光硅晶片的方法，其能够抑制来自载体的不期望的声音的产生并且减少抛光后的晶片的厚度变化。 该方法是晶片抛光方法，其中通过将抛光溶液提供给位于载体10上方和下方的一对抛光垫30的表面30a进行研磨，每个抛光垫具有用于保持晶片20的圆形孔11，载体10为 比晶片20薄; 并且相对于载体10滑动抛光垫30，从而同时抛光保留在载体10中的晶片20的两个表面。该方法的特征在于，当载体10的厚度和载体10的厚度之间的差异 检测晶片20的厚度达到预定值，以计算晶片20的厚度，从而终止抛光。
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公开(公告)号：US08932952B2
公开(公告)日：2015-01-13
申请号：US13641546
申请日：2011-03-23
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08 , B24B37/245 , B24B37/28
摘要： Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.
摘要翻译： 公开了一种用于抛光硅晶片的方法，其中对硅晶片的待抛光表面进行粗抛光，同时提供通过将水溶性聚合物添加到不含游离磨料的碱性水溶液中而获得的抛光液 谷物，抛光布。 因此，可以以高抛光速度抛光抛光表面，并且可以控制包括滚降和卷起的边缘部分的平坦度。
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公开(公告)号：US20130032573A1
公开(公告)日：2013-02-07
申请号：US13641546
申请日：2011-03-23
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08 , B24B37/245 , B24B37/28
摘要： Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.
摘要翻译： 公开了一种用于抛光硅晶片的方法，其中对硅晶片的待抛光表面进行粗抛光，同时提供通过将水溶性聚合物添加到不含游离磨料的碱性水溶液中而获得的抛光液 谷物，抛光布。 因此，可以以高抛光速度抛光抛光表面，并且可以控制包括滚降和卷起的边缘部分的平坦度。
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