发明授权
- 专利标题: Plasma activated conformal film deposition
- 专利标题(中): 等离子体激活的保形膜沉积
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申请号: US13084399申请日: 2011-04-11
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公开(公告)号: US08728956B2公开(公告)日: 2014-05-20
- 发明人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
- 申请人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
- 申请人地址: US CA Fremont
- 专利权人: Novellus Systems, Inc.
- 当前专利权人: Novellus Systems, Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Weaver Austin Villeneuve & Sampson LLP
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
公开/授权文献
- US20110256726A1 PLASMA ACTIVATED CONFORMAL FILM DEPOSITION 公开/授权日:2011-10-20
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