公开(公告)号：US08637411B2

公开(公告)日：2014-01-28

申请号：US13242084

申请日：2011-09-23

Applicant: Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC: H01L21/469 ,  H01L21/31 ,  H01L21/311

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US20120028454A1

公开(公告)日：2012-02-02

申请号：US13242084

申请日：2011-09-23

Applicant: Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC: H01L21/225 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US20110256726A1

公开(公告)日：2011-10-20

申请号：US13084399

申请日：2011-04-11

Applicant: Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/311 ,  H01L21/31 ,  H01L21/306 ,  C23F1/02 ,  B05C5/00 ,  B32B38/08

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US20130267081A1

公开(公告)日：2013-10-10

申请号：US13857566

申请日：2013-04-05

Applicant: Keith Fox ,  Bart J. Van Schravendijk ,  Dong Niu ,  Lucas B. Henderson ,  Joseph L. Womack

Inventor： Keith Fox ,  Bart J. Van Schravendijk ,  Dong Niu ,  Lucas B. Henderson ,  Joseph L. Womack

IPC: H01L21/324

CPC classification number: H01L21/324 ,  C23C16/24 ,  C23C16/56 ,  H01L27/11582

Abstract: The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

Abstract translation: 本文公开的方法和装置涉及可被称为“软退火”的方法。 软退火提供了各种好处。 从根本上说，它降低了工件的一个或多个硅层的内应力。 通常，尽管不一定，内应力是压应力。 软退火的特别有益的应用是在包含两层或更多层硅的堆叠中减少内部应力。 通常，堆叠中的一层或多层层的内应力显示为晶片弓。 软退火工艺可用于减少含硅堆叠中的压缩弓。 可以执行软退火工艺，而不会使堆叠中的硅变得活化。

公开(公告)号：US20130157466A1

公开(公告)日：2013-06-20

申请号：US13766696

申请日：2013-02-13

Applicant: Keith Fox ,  Dong Niu ,  Joseph L. Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk ,  Jennifer O'Loughlin

Inventor： Keith Fox ,  Dong Niu ,  Joseph L. Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk ,  Jennifer O'Loughlin

IPC: H01L21/306

CPC classification number: H01L21/30604 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32082 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L28/40

Abstract: The embodiments herein relate to plasma-enhanced chemical vapor deposition methods and apparatus for depositing silicon nitride on a substrate. The disclosed methods provide silicon nitride films having wet etch rates (e.g., in dilute hydrofluoric acid or hot phosphoric acid) suitable for certain applications such as vertical memory devices. Further, the methods provide silicon nitride films having defined levels of internal stress suitable for the applications in question. These silicon nitride film characteristics can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor. In certain embodiments, a boron-containing precursor is added.

Abstract translation: 本文的实施方案涉及用于在衬底上沉积氮化硅的等离子体增强化学气相沉积方法和装置。 所公开的方法提供了适用于某些应用例如垂直存储器件的具有湿蚀刻速率（例如，在稀氢氟酸或热磷酸中）的氮化硅膜。 此外，这些方法提供具有适合于所讨论的应用的具有确定的内部应力水平的氮化硅膜。 这些氮化硅膜特性可以通过控制例如前体的组成和流速以及提供给等离子体的RF功率和反应器中的压力来设定或调节。 在某些实施方案中，加入含硼前体。

公开(公告)号：US06303518B1

公开(公告)日：2001-10-16

申请号：US09409580

申请日：1999-09-30

Applicant: Jason L. Tian ,  M. Ziaul Karim ,  Bart J. van Schravendijk

Inventor： Jason L. Tian ,  M. Ziaul Karim ,  Bart J. van Schravendijk

IPC: H01L21469

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02362 ,  H01L21/31629

Abstract: An improved CVD process, preferably a PECVD process, for forming a low-dielectric-constant insulating material on a semiconductor substrate, or on and/or under a metal barrier, or etch stop layer of SiNx, Ta(N), TiN, WNx and others. Specifically, the improved PECVD process provides for deposition of an N2O+SiF4+SiH4 based FSG film having improved characteristics, which may be accomplished in any conventional PECVD chamber, but preferably in a dual frequency PECVD chamber.

Abstract translation: 用于在半导体衬底上或在金属屏障上和/或下面形成低介电常数绝缘材料的改进的CVD工艺，优选PECVD工艺，或SiN x，Ta（N），TiN，WNx的蚀刻停止层 和别的。 具体地，改进的PECVD工艺提供了具有改进特性的N2O + SiF4 + SiH4基FSG膜的沉积，这可以在任何传统的PECVD室中完成，但优选在双频PECVD室中。

公开(公告)号：US5425803A

公开(公告)日：1995-06-20

申请号：US270515

申请日：1994-07-05

Applicant: Bart J. van Schravendijk ,  Christopher W. Burkhart ,  Tito H. Santiago ,  Charles E. Pomeroy ,  Jeffrey W. Lind

Inventor： Bart J. van Schravendijk ,  Christopher W. Burkhart ,  Tito H. Santiago ,  Charles E. Pomeroy ,  Jeffrey W. Lind

IPC: B01D19/00 ,  C23C16/44 ,  C23C16/448 ,  C30B25/14

CPC classification number: B01D19/0031 ,  C23C16/4402 ,  C23C16/448

Abstract: An apparatus and a method for delivering a liquid are disclosed. The liquid contained in a vessel is subjected to a pressurized gas. Any pressurized gas dissolved in the liquid is removed in a degas module by passing the liquid through a gas permeable tube subjected to a pressure differential. Then the liquid is dispensed by a liquid mass flow controller.

Abstract translation: 公开了用于输送液体的装置和方法。 包含在容器中的液体经受加压气体。 溶解在液体中的任何加压气体通过使液体通过经受压差的气体渗透管而在脱气组件中被去除。 然后液体由液体质量流量控制器分配。

公开(公告)号：US20140179114A1

公开(公告)日：2014-06-26

申请号：US13842054

申请日：2013-03-15

Applicant: Bart J. van Schravendijk

Inventor： Bart J. van Schravendijk

IPC: H01L21/02 ,  C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  Y10T137/8593

Abstract: A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a baffle that partitions the remote volume from the baffle volume. The baffle volume and the remote volume may be fluidly connected through the baffle via a plurality of baffle holes. The baffle may be offset from a faceplate with a plurality of first gas distribution holes fluidly connected with the baffle volume. A baffle gas inlet may be fluidly connected with the baffle volume, and a first process gas inlet may be fluidly connected with the remote volume. Baffle gas may be flowed into the baffle volume to prevent radicalized first process gas in the remote volume from flowing through the baffle volume and the faceplate.

Abstract translation: 提供了在原子层沉积半导体处理操作期间提供自由基的根源。 激进源可以包括远程容积，挡板体积和将远程容积与挡板体积分隔开的挡板。 挡板体积和远端体积可以通过多个挡板通过挡板流体连接。 挡板可以从具有与挡板体积流体连接的多个第一气体分配孔的面板偏移。 挡板气体入口可以与挡板体积流体连接，并且第一工艺气体入口可以与远程容积流体连接。 挡板气体可以流入挡板体积，以防止远处体积中的自发化的第一工艺气体流过挡板体积和面板。

公开(公告)号：US08728956B2

公开(公告)日：2014-05-20

申请号：US13084399

申请日：2011-04-11

Applicant: Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US07541200B1

公开(公告)日：2009-06-02

申请号：US11476426

申请日：2006-06-27

Applicant: Bart J. van Schravendijk ,  Justin F. Gaynor

Inventor： Bart J. van Schravendijk ,  Justin F. Gaynor

IPC: H01L21/00

CPC classification number: H01L21/31058 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826

Abstract: The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.

Abstract translation: 本发明提供了修复IC制造中通常使用的工艺引起的对低k电介质膜的损伤的方法。 该方法可以集成到各个阶段的IC制造工艺流程中。 根据各种实施例，涉及在沉积低k膜的晶片上执行IC制造工艺的方法，并且随后用甲硅烷基化剂处理该膜以修复在该过程期间对膜的损坏。 可能在一个或多个破坏性处理步骤之后执行损伤修复。