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公开(公告)号:US20110256726A1
公开(公告)日:2011-10-20
申请号:US13084399
申请日:2011-04-11
申请人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号: H01L21/311 , H01L21/31 , H01L21/306 , C23F1/02 , B05C5/00 , B32B38/08
CPC分类号: H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译: 在基材表面上沉积膜的方法包括表面介导的反应,其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面,该方法的特征在于以下操作:(a)在允许第一反应物吸附到基底表面上的条件下,将气相底物表面暴露于第一反应物; (b)当所述第一反应物吸附在所述基材表面上时,将所述基材表面暴露于气相中的第二反应物; 和(c)将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。
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公开(公告)号:US08728956B2
公开(公告)日:2014-05-20
申请号:US13084399
申请日:2011-04-11
申请人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号: H01L21/31
CPC分类号: H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译: 在基材表面上沉积膜的方法包括表面介导的反应,其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面,该方法的特征在于以下操作:(a)在允许第一反应物吸附到基底表面上的条件下,将气相底物表面暴露于第一反应物; (b)当所述第一反应物吸附在所述基材表面上时,将所述基材表面暴露于气相中的第二反应物; 和(c)将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。
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公开(公告)号:US08637411B2
公开(公告)日:2014-01-28
申请号:US13242084
申请日:2011-09-23
申请人: Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人: Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号: H01L21/469 , H01L21/31 , H01L21/311
CPC分类号: H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
摘要翻译: 在基材表面上沉积膜的方法包括表面介导的反应,其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面,该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。
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公开(公告)号:US20120028454A1
公开(公告)日:2012-02-02
申请号:US13242084
申请日:2011-09-23
申请人: Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人: Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号: H01L21/225 , C23C16/52 , C23C16/50 , C23C16/455 , C23C16/458
CPC分类号: H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
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公开(公告)号:US20110256734A1
公开(公告)日:2011-10-20
申请号:US13084305
申请日:2011-04-11
IPC分类号: H01L21/318
CPC分类号: H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要: Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included.
摘要翻译: 描述了在衬底上制造SiN材料的方法,特别是在半导体衬底上的SiN薄膜。 还包括通过这些方法制备的改进的SiN膜。
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公开(公告)号:US20130189854A1
公开(公告)日:2013-07-25
申请号:US13414619
申请日:2012-03-07
IPC分类号: H01L21/318
CPC分类号: C23C16/345 , C23C16/45542 , C23C16/45544 , C23C16/45557 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L29/7843
摘要: Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.
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公开(公告)号:US08362571B1
公开(公告)日:2013-01-29
申请号:US13016660
申请日:2011-01-28
申请人: Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
发明人: Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
IPC分类号: H01L21/02
CPC分类号: H01L21/02115 , H01L21/02274 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/7843 , H01L29/7848
摘要: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.
摘要翻译: 晶体管架构和制造工艺产生通道应变,而不会不利地影响晶体管制造工艺的效率,同时保持材料质量并增强所得晶体管的性能。 产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。 来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道,以在PMOS沟道中产生压缩应变。
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公开(公告)号:US07906817B1
公开(公告)日:2011-03-15
申请号:US12134969
申请日:2008-06-06
申请人: Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
发明人: Qingguo Wu , James S. Sims , Mandyam Sriram , Seshasayee Varadarajan , Haiying Fu , Pramod Subramonium , Jon Henri , Sirish Reddy
IPC分类号: H01L29/76
CPC分类号: H01L21/02115 , H01L21/02274 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/7843 , H01L29/7848
摘要: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.
摘要翻译: 晶体管架构和制造工艺产生通道应变,而不会不利地影响晶体管制造工艺的效率,同时保持材料质量并增强所得晶体管的性能。 产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。 来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道,以在PMOS沟道中产生压缩应变。
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公开(公告)号:US08592328B2
公开(公告)日:2013-11-26
申请号:US13414619
申请日:2012-03-07
IPC分类号: H01L21/471 , H05H1/24
CPC分类号: C23C16/345 , C23C16/45542 , C23C16/45544 , C23C16/45557 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L29/7843
摘要: Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.
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公开(公告)号:US08647993B2
公开(公告)日:2014-02-11
申请号:US13472282
申请日:2012-05-15
申请人: Adrien LaVoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
发明人: Adrien LaVoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
IPC分类号: H01L21/469 , H01L21/31
CPC分类号: H01L21/02167 , C23C16/325 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277 , H01L21/0228
摘要: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.
摘要翻译: 描述了在衬底上制备包括含碳和/或含氧膜如SiCN(也称为SiNC),SiON和SiONC膜的氮化硅(SiN)材料和其它含硅膜的方法。 根据各种实施方案,所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中,例如,该方法涉及蒸气相胺共反应物的紫外(UV)活化。 该方法可用于在低于约400℃的温度下沉积含硅膜,包括SiN和SiCN膜。
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