Invention Grant
- Patent Title: Multi charged particle beam writing method and multi charged particle beam writing apparatus
- Patent Title (中): 多带电粒子束写入方法和多带电粒子束写入装置
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Application No.: US13896767Application Date: 2013-05-17
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Publication No.: US08729507B2Publication Date: 2014-05-20
- Inventor: Ryoichi Yoshikawa , Muehiro Ogasawara
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-126368 20120601
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01L21/30 ; H01J37/304 ; H01J37/317

Abstract:
A multi charged particle beam writing method includes calculating first shot positions of multiple beams, each of which includes a distortion amount of an irradiating corresponding beam, in a case of irradiating each beam, based on control grid intervals, calculating first condition positions based on a pre-set condition, each of which is arranged in a corresponding first region surrounded by closest second shot positions of 2×2 in length and width of the first shot positions, calculating, for each of second regions respectively surrounded by closest second condition positions of the first condition positions, an area density of a figure pattern in overlapping with a second region concerned, calculating an irradiation amount or an irradiation time of each beam whose corresponding first shot position is in a corresponding second region, based on an area density, and writing a pattern by irradiating a beam of the calculated irradiation amount or time.
Public/Granted literature
- US20130320230A1 MULTI CHARGED PARTICLE BEAM WRITING METHOD AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS Public/Granted day:2013-12-05
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