发明授权
- 专利标题: Nitride semiconductor element and manufacturing method therefor
- 专利标题(中): 氮化物半导体元件及其制造方法
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申请号: US13596849申请日: 2012-08-28
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公开(公告)号: US08729587B2公开(公告)日: 2014-05-20
- 发明人: Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
- 申请人: Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: Renner, Otto, Boisselle & Sklar, LLP
- 优先权: JP2010-085221 20100401
- 主分类号: H01L33/30
- IPC分类号: H01L33/30 ; H01L33/50
摘要:
An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.