发明授权
- 专利标题： Common line current for program level determination in flash memory
- 专利标题（中）： 闪存中程序级确定的通用电流
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申请号： US13569024申请日： 2012-08-07
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公开(公告)号： US08730724B2公开(公告)日： 2014-05-20
- 发明人: Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
- 申请人： Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies Inc.
- 当前专利权人： SanDisk Technologies Inc.
- 当前专利权人地址： US TX Plano
- 代理机构： Davis Wright Tremaine LLP
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/56
摘要：
In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.