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公开(公告)号：US08202162B2
公开(公告)日：2012-06-19
申请号：US13204667
申请日：2011-08-06
申请人： Shyh-Jye Wang , Michael C. Wang , Sung-En Wang
发明人： Shyh-Jye Wang , Michael C. Wang , Sung-En Wang
IPC分类号： A63F13/00
CPC分类号： A63F13/211 , A63F13/00 , A63F13/08 , A63F13/285 , A63F2300/1037 , A63F2300/1043 , A63F2300/105 , A63F2300/643 , A63F2300/646
摘要： An impact emulator that provides impact effects to a player of a video game system is provided. The video game system has a magnetic field generator that is able to produce magnetic field to generate a force on a magnet on a remote controller. The amount of magnetic field to be produced is depending on the relative movement of the remote controller and a target element.
摘要翻译： 提供了向视频游戏系统的播放器提供影响效果的影响模拟器。 视频游戏系统具有能够产生磁场以在遥控器上的磁体上产生力的磁场发生器。 要产生的磁场量取决于遥控器和目标元件的相对移动。
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公开(公告)号：US08002635B2
公开(公告)日：2011-08-23
申请号：US12077981
申请日：2008-03-24
申请人： Shyh-Jye Wang , Michael C. Wang , Sung-En Wang
发明人： Shyh-Jye Wang , Michael C. Wang , Sung-En Wang
IPC分类号： A63F13/00
CPC分类号： A63F13/211 , A63F13/00 , A63F13/08 , A63F13/285 , A63F2300/1037 , A63F2300/1043 , A63F2300/105 , A63F2300/643 , A63F2300/646
摘要： An impact emulator that provides impact effects to a player of a video game system is provided. The video game system has a magnetic field generator that is able to produce magnetic field to generate a force on a magnet on a remote controller. The amount of magnetic field to be produced is depending on the relative movement of the remote controller and a target element.
摘要翻译： 提供了向视频游戏系统的播放器提供影响效果的影响模拟器。 视频游戏系统具有能够产生磁场以在遥控器上的磁体上产生力的磁场发生器。 要产生的磁场量取决于遥控器和目标元件的相对移动。
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公开(公告)号：US20110287837A1
公开(公告)日：2011-11-24
申请号：US13204667
申请日：2011-08-06
申请人： Shyh-Jye Wang , Michael C. Wang , Sung-En Wang
发明人： Shyh-Jye Wang , Michael C. Wang , Sung-En Wang
IPC分类号： G06F17/00
CPC分类号： A63F13/211 , A63F13/00 , A63F13/08 , A63F13/285 , A63F2300/1037 , A63F2300/1043 , A63F2300/105 , A63F2300/643 , A63F2300/646
摘要： An impact emulator that provides impact effects to a player of a video game system is provided. The video game system has a magnetic field generator that is able to produce magnetic field to generate a force on a magnet on a remote controller. The amount of magnetic field to be produced is depending on the relative movement of the remote controller and a target element.
摘要翻译： 提供了向视频游戏系统的播放器提供影响效果的影响模拟器。 视频游戏系统具有能够产生磁场以在遥控器上的磁体上产生力的磁场发生器。 要产生的磁场量取决于遥控器和目标元件的相对移动。
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公开(公告)号：US20090239652A1
公开(公告)日：2009-09-24
申请号：US12077981
申请日：2008-03-24
申请人： Shyh-Jye WANG , Michael C. WANG , Sung-En WANG
发明人： Shyh-Jye WANG , Michael C. WANG , Sung-En WANG
IPC分类号： A63F9/24
CPC分类号： A63F13/211 , A63F13/00 , A63F13/08 , A63F13/285 , A63F2300/1037 , A63F2300/1043 , A63F2300/105 , A63F2300/643 , A63F2300/646
摘要： An impact emulator that provides impact effects to a player of a video game system is provided. The video game system has a magnetic field generator that is able to produce magnetic field to generate a force on a magnet on a remote controller. The amount of magnetic field to be produced is depending on the relative movement of the remote controller and a target element.
摘要翻译： 提供了向视频游戏系统的播放器提供影响效果的影响模拟器。 视频游戏系统具有能够产生磁场以在遥控器上的磁体上产生力的磁场发生器。 要产生的磁场量取决于遥控器和目标元件的相对移动。
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5.发明授权Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transition 有权通过在NAND闪存的写操作期间均衡和调节源，阱和位线电平进行充电循环：程序验证转换公开(公告)号：US08842471B2
公开(公告)日：2014-09-23
申请号：US13570746
申请日：2012-08-09
申请人： Hao Thai Nguyen , Juan Carlos Lee , Seungpil Lee , Masahide Matsumoto , Jongmin Park , Man Lung Mui , Sung-En Wang
发明人： Hao Thai Nguyen , Juan Carlos Lee , Seungpil Lee , Masahide Matsumoto , Jongmin Park , Man Lung Mui , Sung-En Wang
CPC分类号： G11C11/5628 , G11C16/3454 , G11C2211/5621
摘要： In non-volatile memory devices, a write typically consists of an alternating set of pulse and verify operations. At the end of a pulse, the device must be biased properly for an accurate verify, after which the device is re-biased for the next pulse. The intervals between the pulse and verify phases are considered. For the interval after a pulse, but before establishing the verify conditions, the source, bit line, and, optionally, the well levels can be equalized and then regulated at a desired DC level. After a verify phase, but before applying the biasing the memory for the next pulse, the source and bit line levels can be equalized to a DC level.
摘要翻译： 在非易失性存储器件中，写入通常由交替的脉冲和验证操作组成。 在脉冲结束时，器件必须被正确偏置才能进行准确的校验，之后器件被重新偏置用于下一个脉冲。 考虑脉冲和验证阶段之间的间隔。 对于脉冲之后的间隔，但是在建立验证条件之前，可以将源极，位线以及可能的阱电平相等化，然后在期望的DC电平进行调节。 在验证阶段之后，但是在将存储器应用于下一个脉冲之前，源和位线电平可以均衡为直流电平。
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公开(公告)号：US08730724B2
公开(公告)日：2014-05-20
申请号：US13569024
申请日：2012-08-07
申请人： Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
发明人： Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
CPC分类号： G11C11/5628 , G11C11/5642 , G11C16/34
摘要： In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.
摘要翻译： 在存储随机数据的非易失性存储器阵列中，程序级别 - 存储在存储器单元群中的每个存储单元的状态数量是从在读取条件下通过存储器单元群体的总电流确定的，如在公共 线，例如NAND闪存中的源线。
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公开(公告)号：US20140043898A1
公开(公告)日：2014-02-13
申请号：US13569024
申请日：2012-08-07
申请人： Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
发明人： Tien-Chien Kuo , Jonathan H. Huynh , Sung-En Wang
CPC分类号： G11C11/5628 , G11C11/5642 , G11C16/34
摘要： In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.
摘要翻译： 在存储随机数据的非易失性存储器阵列中，程序级别 - 存储在存储器单元群中的每个存储单元的状态数量是从在读取条件下通过存储器单元群体的总电流确定的，如在公共 线，例如NAND闪存中的源线。
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8.发明申请Charge Cycling By Equalizing and Regulating the Source, Well, and Bit Line Levels During Write Operations for NAND Flash Memory: Program to Verify Transition 有权通过在NAND闪存的写入操作期间均衡和调节源，阱和位线电平进行充电循环：验证转换的程序公开(公告)号：US20130176776A1
公开(公告)日：2013-07-11
申请号：US13570746
申请日：2012-08-09
申请人： Hao Thai Nguyen , Juan Carlos Lee , Seungpil Lee , Masahide Matsumoto , Jongmin Park , Man Lung Mui , Sung-En Wang
发明人： Hao Thai Nguyen , Juan Carlos Lee , Seungpil Lee , Masahide Matsumoto , Jongmin Park , Man Lung Mui , Sung-En Wang
CPC分类号： G11C11/5628 , G11C16/3454 , G11C2211/5621
摘要： In non-volatile memory devices, a write typically consists of an alternating set of pulse and verify operations. At the end of a pulse, the device must be biased properly for an accurate verify, after which the device is re-biased for the next pulse. The intervals between the pulse and verify phases are considered. For the interval after a pulse, but before establishing the verify conditions, the source, bit line, and, optionally, the well levels can be equalized and then regulated at a desired DC level. After a verify phase, but before applying the biasing the memory for the next pulse, the source and bit line levels can be equalized to a DC level.
摘要翻译： 在非易失性存储器件中，写入通常由交替的脉冲和验证操作组成。 在脉冲结束时，器件必须被正确偏置才能进行准确的校验，之后器件被重新偏置用于下一个脉冲。 考虑脉冲和验证阶段之间的间隔。 对于脉冲之后的间隔，但是在建立验证条件之前，可以将源极，位线以及可能的阱电平相等化，然后在期望的DC电平进行调节。 在验证阶段之后，但是在将存储器应用于下一个脉冲之前，源和位线电平可以均衡为直流电平。
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