发明授权
- 专利标题: Film deposition method and apparatus
- 专利标题(中): 薄膜沉积方法和装置
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申请号: US13401919申请日: 2012-02-22
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公开(公告)号: US08734901B2公开(公告)日: 2014-05-27
- 发明人: Keisuke Suzuki , Pao-Hwa Chou , Te ching Chang
- 申请人: Keisuke Suzuki , Pao-Hwa Chou , Te ching Chang
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: IPUSA, PLLC
- 优先权: JP2011-038509 20110224
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.
公开/授权文献
- US20120269969A1 FILM DEPOSITION METHOD AND APPARATUS 公开/授权日:2012-10-25