发明授权
- 专利标题: Film-formation method and manufacturing method of light-emitting device
- 专利标题(中): 发光装置的成膜方法和制造方法
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申请号: US12391840申请日: 2009-02-24
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公开(公告)号: US08734915B2公开(公告)日: 2014-05-27
- 发明人: Shunpei Yamazaki , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka , Satoshi Seo
- 申请人: Shunpei Yamazaki , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka , Satoshi Seo
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2008-049971 20080229
- 主分类号: B05D3/06
- IPC分类号: B05D3/06 ; B05D5/12 ; C23C14/32 ; C23C14/28
摘要:
A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer.
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