发明授权
- 专利标题： Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device
- 专利标题（中）： 能够控制晶片表面的元件的电性能的变化的半导体器件的制造系统以及半导体器件的制造方法
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申请号： US12251558申请日： 2008-10-15
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公开(公告)号： US08735181B2公开(公告)日： 2014-05-27
- 发明人: Osamu Fujii , Yoshimasa Kawase , Hisato Oyamatsu , Takeshi Shibata
- 申请人： Osamu Fujii , Yoshimasa Kawase , Hisato Oyamatsu , Takeshi Shibata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2007-271513 20071018
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.
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