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    Ion implanter and method of manufacturing semiconductor device
    2.
    发明授权
    Ion implanter and method of manufacturing semiconductor device 有权
    离子注入机及制造半导体器件的方法

    公开(公告)号：US07247867B2

    公开(公告)日：2007-07-24

    申请号：US11170171

    申请日：2005-06-30

    申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

    发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

    IPC分类号： G01N23/00 ,  G01N21/00 ,  A61N5/00 ,  H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/244 ,  H01J2237/065 ,  H01J2237/083 ,  H01J2237/20207 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578 ,  H01J2237/31703

    摘要： An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

    摘要翻译： 离子注入机包括用于设置具有主表面的样品的样品台，被配置为产生多个离子的离子产生部分，离子产生部分包括引入离子源气体的容器和用于发射热电子的灯丝 设置在容器中的植入部，其构造成在样品的主表面中植入含有多个离子的离子束，以及控制部，其被配置为控制样品的位置或从灯丝发射的电子的空间分布 离子束的重心的偏心方向与主面的法线方向一致。

    Method of manufacture of semiconductor device
    6.
    发明申请
    Method of manufacture of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US20070166977A1

    公开(公告)日：2007-07-19

    申请号：US11644887

    申请日：2006-12-26

    申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

    摘要： A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.

    摘要翻译： 公开了半导体器件制造方法。 首先在含硅半导体衬底的表面上形成含硅栅电极。 然后，在栅电极的侧壁上形成侧壁绝缘膜，并且在半导体衬底上形成金属膜以覆盖栅电极和侧壁绝缘膜。 通过环境气体的热传导来加热半导体衬底的正面和背面。 由此，使金属与包含在半导体衬底和栅电极中的硅反应，形成金属硅化物膜。

    Method and apparatus for manufacturing a semiconductor device
    7.
    发明申请
    Method and apparatus for manufacturing a semiconductor device 有权
    用于制造半导体器件的方法和装置

    公开(公告)号：US20070075272A1

    公开(公告)日：2007-04-05

    申请号：US11519813

    申请日：2006-09-13

    申请人： Yoshimasa Kawase ,  Hiroshi Itokawa

    发明人： Yoshimasa Kawase ,  Hiroshi Itokawa

    IPC分类号： A61N5/00

    CPC分类号： H01L22/12 ,  G01J5/0003 ,  H01L21/67115 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device by processing a wafer, comprises: measuring a reflectivity of a substrate peripheral structure before heating, the substrate peripheral structure being placed close to the wafer and being heated simultaneously with the wafer by a plurality of heat sources; measuring a wafer reflectivity of the wafer before the heating; calculating a wafer emissivity of the wafer from the wafer reflectivity; measuring a wafer radiation intensity of radiation emitted from the wafer during the heating; calculating a wafer temperature of the wafer from the wafer emissivity and the wafer radiation intensity; calculating a target value of on-wafer optical intensity on the wafer so that the wafer temperature becomes a preset temperature; calculating a target value of optical intensity on the substrate peripheral structure from a difference between the reflectivity of the substrate peripheral structure and the wafer reflectivity so that incident light being incident on the substrate peripheral structure and wafer incident light being incident on the wafer have an equal optical intensity; calculating target values of heat source optical intensity for heating by the heat sources so that the target value of on-wafer optical intensity and the target value of optical intensity of the substrate peripheral structure are achieved; calculating target values of heat source power so that the target values of heat source optical intensity are achieved; and inputting the target values of heat source power to the plurality of heat sources and causing the heat sources to emit light.

    摘要翻译： 一种通过处理晶片制造半导体器件的方法，包括：在加热之前测量衬底周边结构的反射率，将衬底周边结构放置在靠近晶片并与多个热源同时与晶片同时加热; 在加热之前测量晶片的晶片反射率; 从晶片反射率计算晶片的晶片发射率; 测量在加热期间从晶片发射的辐射的晶片辐射强度; 从晶片发射率和晶片辐射强度计算晶片的晶片温度; 计算晶片上晶片上光强度的目标值，使得晶片温度成为预设温度; 从基板周边结构的反射率和晶片反射率之间的差异计算基板周边结构上的光强度的目标值，使得入射到基板周边结构上的入射光和入射在晶片上的晶片入射光具有相等的 光强度; 计算由热源加热的热源光强度的目标值，从而实现晶片间光学强度的目标值和基板周边结构的光强度的目标值; 计算热源功率的目标值，从而实现热源光强度的目标值; 并且将热源功率的目标值输入到多个热源并使热源发光。

    Ion implanter and method of manufacturing semiconductor device
    8.
    发明申请
    Ion implanter and method of manufacturing semiconductor device 有权
    离子注入机及制造半导体器件的方法

    公开(公告)号：US20060017017A1

    公开(公告)日：2006-01-26

    申请号：US11170171

    申请日：2005-06-30

    申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

    发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/244 ,  H01J2237/065 ,  H01J2237/083 ,  H01J2237/20207 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578 ,  H01J2237/31703

    摘要： An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

    摘要翻译： 离子注入机包括用于设置具有主表面的样品的样品台，被配置为产生多个离子的离子产生部分，离子产生部分包括引入离子源气体的容器和用于发射热电子的灯丝 设置在容器中的植入部，其构造成在样品的主表面中植入包含多个离子的离子束，以及控制部，其被配置为控制样品的位置或从灯丝发射的电子的空间分布 离子束的重心的偏心方向与主面的法线方向一致。

    Method of manufacture of semiconductor device
    9.
    发明授权
    Method of manufacture of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07557040B2

    公开(公告)日：2009-07-07

    申请号：US11644887

    申请日：2006-12-26

    申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Toshihiko Iinuma ,  Haruko Akutsu ,  Kyoichi Suguro

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

    摘要： A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.

    摘要翻译： 公开了半导体器件制造方法。 首先在含硅半导体衬底的表面上形成含硅栅电极。 然后，在栅电极的侧壁上形成侧壁绝缘膜，并且在半导体衬底上形成金属膜以覆盖栅电极和侧壁绝缘膜。 通过环境气体的热传导来加热半导体衬底的正面和背面。 由此，使金属与包含在半导体衬底和栅电极中的硅反应，形成金属硅化物膜。

    Wafer heat-treatment system and wafer heat-treatment method
    10.
    发明授权
    Wafer heat-treatment system and wafer heat-treatment method 失效
    晶圆热处理系统和晶圆热处理方法

    公开(公告)号：US06769908B2

    公开(公告)日：2004-08-03

    申请号：US10066783

    申请日：2002-02-06

    申请人： Yoshimasa Kawase

    发明人： Yoshimasa Kawase

    IPC分类号： F27D1502

    CPC分类号： H01L21/67115 ,  H01L21/67109

    摘要： A wafer heat-treatment system for processing a wafer by a high-temperature heat-treatment process and cooling the heat-treated wafer, comprises walls surrounding a closed space placing the wafer and having a hollow sealing a gas therein, and a pressure-regulating unit connecting to the hollow for regulating pressure in the hollow. Hence, the wafer heat-treatment system reduces power consumption by heating lamps by carrying out an evacuating process before the high-temperature heat-treatment process, and shortens the time necessary for the cool down process by a pressurizing process that is carried out after the completion of the high-temperature heat-treatment process.

    摘要翻译： 一种用于通过高温热处理工艺处理晶片并冷却经热处理的晶片的晶片热处理系统包括围绕放置晶片的封闭空间的壁，并且在其中具有中空密封气体，以及压力调节 连接到空心的单元，用于调节空心中的压力。 因此，晶片热处理系统通过在高温热处理工序之前进行抽真空加热来降低功率消耗，并且通过加压处理之后进行的加压处理来缩短冷却工序所需的时间 完成高温热处理工艺。