Invention Grant
- Patent Title: Gate tunable tunnel diode
- Patent Title (中): 栅极可调隧道二极管
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Application No.: US13594037Application Date: 2012-08-24
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Publication No.: US08735271B2Publication Date: 2014-05-27
- Inventor: Ali Afzali-Ardakani , Damon Farmer
- Applicant: Ali Afzali-Ardakani , Damon Farmer
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.
Public/Granted literature
- US20140057425A1 GATE TUNABLE TUNNEL DIODE Public/Granted day:2014-02-27
Information query
IPC分类:
