发明授权
US08735302B2 High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extraction 有权
高生产率组合氧化物梯度和PVD / ALD金属沉积结合光刻用于栅极功能提取

High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extraction
摘要:
Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.
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