利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

70 条记录 (耗时 0.027 秒)

    Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas
    5.
    发明授权
    Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas 有权
    使用氯气去除NiPtSi应用的Ni和Pt残留物的工艺

    公开(公告)号：US08466058B2

    公开(公告)日：2013-06-18

    申请号：US13295333

    申请日：2011-11-14

    申请人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

    发明人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

    IPC分类号： H01L21/44

    CPC分类号： H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

    摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

    摘要翻译： 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

    PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS
    6.
    发明申请
    PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS 有权
    使用氯仿气体去除NiPtSi应用的Ni和Pt残留物的工艺

    公开(公告)号：US20130122670A1

    公开(公告)日：2013-05-16

    申请号：US13295333

    申请日：2011-11-14

    申请人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

    发明人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

    IPC分类号： H01L21/336 ,  B08B3/08 ,  H01L21/28

    CPC分类号： H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

    摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

    摘要翻译： 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

    Method and an assembly for electrolytically depositing a coating
    10.
    发明授权
    Method and an assembly for electrolytically depositing a coating 有权
    电镀沉积涂层的方法和组件

    公开(公告)号：US09464363B2

    公开(公告)日：2016-10-11

    申请号：US13519350

    申请日：2010-12-28

    申请人： Justine Menuey ,  Frederic Braillard ,  John Foster ,  Stephen Owens ,  Alan Taylor ,  Martin Chatterney

    发明人： Justine Menuey ,  Frederic Braillard ,  John Foster ,  Stephen Owens ,  Alan Taylor ,  Martin Chatterney

    IPC分类号： C23C10/60 ,  C23C10/02 ,  C25D15/00 ,  C25D17/00 ,  C25D5/02 ,  C25D5/16 ,  F01D5/00

    CPC分类号： C25D17/008 ,  C25D5/022 ,  C25D5/16 ,  C25D15/00 ,  F01D5/005

    摘要： A method for repairing a blade forming a cathode and having a surface to be coated defining a critical area, utilizing an anode, an electrolyte bath including insoluble particles, and a mounting on which the blade is mounted in a working position relative to a reference wall. The mounting is placed in the bath, and the particles and the metal of the anode are co-deposited to form the coating on the surface to be coated. The anode is typically placed facing the critical area and the mounting includes a mechanism for monitoring current lines to obtain a coating with a relatively constant, predetermined thickness for the critical area, that gradually falls to a value of substantially zero along edges of the coating.

    摘要翻译： 一种用于修复形成阴极并且具有限定临界区域的刀片的刀片的方法，利用阳极，包括不溶性颗粒的电解质浴池和其上刀片相对于参考壁安装在工作位置的安装件 。 将安装件放置在浴中，并且将阳极的颗粒和金属共沉积以在待涂覆的表面上形成涂层。 阳极通常放置成面向临界区域，并且安装件包括用于监测电流线以获得对于临界区域具有相对恒定的预定厚度的涂层的机构，其沿着涂层的边缘逐渐下降到基本为零的值。