Invention Grant
- Patent Title: Field effect transistor device and fabrication
- Patent Title (中): 场效应晶体管器件和制造
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Application No.: US13775369Application Date: 2013-02-25
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Publication No.: US08736023B2Publication Date: 2014-05-27
- Inventor: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Yanfeng Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/423 ; H01L29/66 ; H01L21/8238
Abstract:
A method for forming a field effect transistor (FET) device includes forming a dielectric layer on a substrate, forming a first metal layer on the dielectric layer, removing a portion of the first metal layer to expose a portion of the dielectric layer, forming a second metal layer on the dielectric layer and the first metal layer, and removing a portion of the first metal layer and the second metal layer to define a boundary region between a first FET device and a second FET device.
Public/Granted literature
- US20130171813A1 FIELD EFFECT TRANSISTOR DEVICE AND FABRICATION Public/Granted day:2013-07-04
Information query
IPC分类:
