Invention Grant
- Patent Title: Semiconductor device and method for making same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13327896Application Date: 2011-12-16
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Publication No.: US08736072B2Publication Date: 2014-05-27
- Inventor: Yu-Ching Wang , Chan-Kang Kuo , Ting-Yu Yen , Hsing-Wang Chen , Chun-Shiang Chang , Yen-Shen Chen
- Applicant: Yu-Ching Wang , Chan-Kang Kuo , Ting-Yu Yen , Hsing-Wang Chen , Chun-Shiang Chang , Yen-Shen Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A semiconductor circuit pattern includes an angled conductive pattern having a line portion and a pad portion at an end of the line portion extending normal to the line portion on a first side of the line portion. The pad portion has a width greater than a width of the line portion. A spacing has a first portion adjacent the first side of the pad portion, and a second portion adjacent a second side of the pad portion opposite the first side. The first portion of the spacing has a width greater than the width of the second portion of the spacing.
Public/Granted literature
- US20130154114A1 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING SAME Public/Granted day:2013-06-20
Information query
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