发明授权
- 专利标题： High resistivity silicon-on-insulator substrate and method of forming
- 专利标题（中）： 高电阻率硅绝缘体基板及其成型方法
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申请号： US13342697申请日： 2012-01-03
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公开(公告)号： US08741739B2公开(公告)日： 2014-06-03
- 发明人: Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph
- 申请人： Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Michael J. LeStrange
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
A semiconductor structure and a method of forming the same. In one embodiment, a method of forming a silicon-on-insulator (SOI) wafer substrate includes: providing a handle substrate; forming a high resistivity material layer over the handle substrate, the high resistivity material layer including one of an amorphous silicon carbide (SiC), a polycrystalline SiC, an amorphous diamond, or a polycrystalline diamond; forming an insulator layer over the high resistivity material layer; and bonding a donor wafer to a top surface of the insulator layer to form the SOI wafer substrate.