A method for patterning a plurality of features in a non-rectangular pattern on an integrated circuit device includes providing a substrate including a surface with a first layer and a second layer. Forming a plurality of elongated protrusions in a third layer above the first and second layers. Forming a first patterned layer over the plurality of elongated protrusions. The plurality of elongated protrusions are etched to form a first pattern of the elongated protrusions, the first pattern including at least one inside corner. Forming a second patterned layer over the first pattern of elongated protrusions and forming a third patterned layer over the first pattern of elongated protrusions. The plurality of elongated protrusions are etched using the second and third patterned layers to form a second pattern of the elongated protrusions, the second pattern including at least one inside corner.