Invention Grant
- Patent Title: Double gate planar field effect transistors
- Patent Title (中): 双栅平面场效应晶体管
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Application No.: US13944480Application Date: 2013-07-17
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Publication No.: US08742511B2Publication Date: 2014-06-03
- Inventor: Josephine B. Chang , Leland Chang , Chung-Hsun Lin , Jeffrey W. Sleight
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A transistor device includes multiple planar layers of channel material connecting a source region and a drain region, where the planar layers are formed in a stack of layers of a channel material; and a gate conductor formed around and between the planar layers of channel material.
Public/Granted literature
- US20130306935A1 DOUBLE GATE PLANAR FIELD EFFECT TRANSISTORS Public/Granted day:2013-11-21
Information query
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