Invention Grant
- Patent Title: Buffer circuit for semiconductor device
- Patent Title (中): 半导体器件缓冲电路
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Application No.: US13717931Application Date: 2012-12-18
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Publication No.: US08742801B2Publication Date: 2014-06-03
- Inventor: Kyung-Soo Ha , Ho-Seok Seol , Woo-Jin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2012-0017993 20120222
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A buffer circuit is provided which is insensitive to a duty distortion regardless of the change of operation environment. The buffer circuit includes a current mode logic buffer and a differential-to-single-ended converter. The differential-to-single-ended converter receives first and second differential output signals to generate a single ended output signal and is configured so that an internal control node of the differential-to-single-ended converter is controlled in a negative feedback method to maintain a constant duty ratio of the single ended output signal regardless of the change of operation environment. According to some embodiments, a duty distortion of the single ended output signal due to the change of operation environment such as a process, a voltage, a temperature, etc. is reduced or minimized and thereby performance of the buffer circuit is improved and operation reliability is improved.
Public/Granted literature
- US20130214843A1 BUFFER CIRCUIT FOR SEMICONDUCTOR DEVICE Public/Granted day:2013-08-22
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