发明授权
- 专利标题： Resist composition and patterning process using the same
- 专利标题（中）： 抗蚀剂组成和图案化工艺使用相同
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申请号： US13345355申请日： 2012-01-06
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公开(公告)号： US08748076B2公开(公告)日： 2014-06-10
- 发明人: Takayuki Nagasawa , Tomohiro Kobayashi , Ryosuke Taniguchi , Masaki Ohashi
- 申请人： Takayuki Nagasawa , Tomohiro Kobayashi , Ryosuke Taniguchi , Masaki Ohashi
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2011-016066 20110128; JP2011-204482 20110920
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/38
摘要：
There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
公开/授权文献
- US20120196228A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 公开/授权日：2012-08-02
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