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19 条记录 (耗时 0.027 秒)

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    2.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    积极的组合和绘图过程

    公开(公告)号：US20120164577A1

    公开(公告)日：2012-06-28

    申请号：US13309083

    申请日：2011-12-01

    申请人： Ryosuke TANIGUCHI ,  Tomohiro KOBAYASHI ,  Takayuki NAGASAWA ,  Masaki OHASHI

    发明人： Ryosuke TANIGUCHI ,  Tomohiro KOBAYASHI ,  Takayuki NAGASAWA ,  Masaki OHASHI

    IPC分类号： G03F7/20 ,  G03F7/004 ,  G03F7/027

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041

    摘要： A positive resist composition includes at least: (A) a polymer containing a repeating unit (a1) and an acid labile repeating unit (a2), wherein the repeating unit (a1) generates an acid of a structure represented by general formula (1) as a result that the repeating unit (a1) is sensed to a high-energy radiation, the polymer being changed in solubility in alkali by the acid; and (B) an onium sulfonate represented by general formula (2). Also, a positive resist composition, which simultaneously establishes a lower acid diffusing characteristic and a higher dissolution contrast, and which suppresses volatilization of components originated from the resist composition such as a generated acid, a quencher, and the like, to suppress a chemical flare, thereby improving a DOF, a circularity, an LWR, and the like of a hole pattern, trench pattern, and the like; and a patterning process using the positive resist composition.

    摘要翻译： 正型抗蚀剂组合物至少包括：（A）含有重复单元（a1）和酸不稳定重复单元（a2）的聚合物，其中重复单元（a1）产生由通式（1）表示的结构的酸， 结果，重复单元（a1）被感测为高能量辐射，聚合物通过酸改变在碱中的溶解度; 和（B）由通式（2）表示的鎓磺酸盐。 而且，正极抗蚀剂组合物同时形成较低的酸扩散特性和较高的溶解对比度，并且抑制源自抗蚀剂组合物的组分如产生的酸，猝灭剂等的挥发，以抑制化学发光 从而改善孔图案，沟槽图案等的DOF，圆形度，LWR等; 以及使用正性抗蚀剂组合物的图案化工艺。

    RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME
    5.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
    使用它的耐腐蚀组合物和图案处理方法

    公开(公告)号：US20120196228A1

    公开(公告)日：2012-08-02

    申请号：US13345355

    申请日：2012-01-06

    申请人： Takayuki NAGASAWA ,  Tomohiro KOBAYASHI ,  Ryosuke TANIGUCHI ,  Masaki OHASHI

    发明人： Takayuki NAGASAWA ,  Tomohiro KOBAYASHI ,  Ryosuke TANIGUCHI ,  Masaki OHASHI

    IPC分类号： G03F7/20 ,  G03F7/027

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.

    摘要翻译： 公开了一种抗蚀剂组合物，其至少包含：（A）含有一个或多个具有下列通式（1）和/或（2）所示结构的重复单元的聚合物，该聚合物的碱溶性通过 一种酸，（B）一种光酸反应器，其响应于高能束，产生由以下通式（3）表示的磺酸，和（C）由以下通式（4）表示的磺酸盐。 可以存在不仅具有优异的LWR和图案轮廓的抗蚀剂组合物，而且还具有极好的抗倒伏性能，并且提供使用其的图案化工艺。

    INTEGRATED CIRCUIT WITH POWER STATE DETERMINATION CIRCUIT
    6.
    发明申请
    INTEGRATED CIRCUIT WITH POWER STATE DETERMINATION CIRCUIT 有权
    集成电路与电源状态确定电路

    公开(公告)号：US20120074926A1

    公开(公告)日：2012-03-29

    申请号：US13159543

    申请日：2011-06-14

    申请人： Hidetoshi Sugiyama ,  Takayuki Nagasawa ,  Hideaki Suzuki

    发明人： Hidetoshi Sugiyama ,  Takayuki Nagasawa ,  Hideaki Suzuki

    IPC分类号： G01R19/00

    CPC分类号： H01L27/0274 ,  G01R31/026 ,  G01R31/2884

    摘要： An integrated circuit in which a power terminal, a ground terminal, an input terminal and an internal circuit are formed, has a unidirectional circuit of a direction from the input terminal to the power terminal, the unidirectional circuit being provided between the input terminal and the power terminal; and a power state determination circuit which detects whether the power terminal is connected to an external power source or not to output a power open detection signal. And the unidirectional circuit includes a first transistor in which a voltage of the power terminal is applied to a gate, and a second transistor connected to the first transistor in series, and a voltage of the external power source is input to the input terminal.

    摘要翻译： 形成有电源端子，接地端子，输入端子和内部电路的集成电路具有从输入端子到电源端子的方向的单向电路，单向电路设置在输入端子和 电源端子; 以及电源状态确定电路，其检测电源端子是否连接到外部电源以输出电源打开检测信号。 单向电路包括：第一晶体管，其中电源端子的电压施加到栅极;以及第二晶体管，其串联连接到第一晶体管，并且外部电源的电压被输入到输入端子。

    Integrated circuit device having ground open detection circuit
    7.
    发明授权
    Integrated circuit device having ground open detection circuit 有权
    具有接地开路检测电路的集成电路装置

    公开(公告)号：US07952371B2

    公开(公告)日：2011-05-31

    申请号：US12764505

    申请日：2010-04-21

    申请人： Takayuki Nagasawa

    发明人： Takayuki Nagasawa

    IPC分类号： G01R31/3187

    CPC分类号： G01R31/2853

    摘要： An integrated circuit device includes a chip having a power supply terminal, a ground terminal, an input terminal, and an internal circuit formed therein. The chip comprises: a unidirectional device disposed between the input terminal and the ground terminal and directed from the ground terminal to the input terminal; and a ground open detection circuit including a first transistor having the gate connected to the input terminal and the source and the drain connected between the power supply terminal and the ground terminal, a second transistor having the gate connected to the ground terminal and the source and the drain connected between the power supply terminal and the ground terminal, and a comparator for comparing potentials of nodes respectively between drains of the first and second transistors and the power supply terminal, and for outputting a ground open detection signal.

    摘要翻译： 集成电路器件包括具有电源端子，接地端子，输入端子和形成在其中的内部电路的芯片。 该芯片包括：设置在输入端子和接地端子之间并从接地端子引导到输入端子的单向装置; 以及接地开路检测电路，包括：第一晶体管，其栅极连接到输入端子，源极和漏极连接在电源端子和接地端子之间;第二晶体管，其栅极连接到接地端子和源极; 连接在电源端子和接地端子之间的漏极以及用于分别在第一和第二晶体管的漏极与电源端子之间分别排列的节点的电位并用于输出接地开路检测信号的比较器。

    Semiconductor memory device
    10.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US06256238B1

    公开(公告)日：2001-07-03

    申请号：US09610856

    申请日：2000-07-06

    申请人： Takayuki Nagasawa ,  Shinya Fujioka

    发明人： Takayuki Nagasawa ,  Shinya Fujioka

    IPC分类号： G11C800

    CPC分类号： G11C8/12 ,  G11C29/787

    摘要： A semiconductor memory device having memory cells, spare memory cells to replace defective memory cells and a decision block. The decision block has a plurality of groups, each of which decides whether an input address is an address which selects a memory cell in the defective memory cells. A signal having a different address expression type of the input address is provided to each of the groups.

    摘要翻译： 具有存储单元的半导体存储器件，用于替换有缺陷存储器单元的备用存储器单元和判定块。 判定块具有多个组，每个组决定输入地址是否是选择缺陷存储单元中的存储单元的地址。 向每个组提供具有输入地址的不同地址表达类型的信号。