发明授权
- 专利标题： Non-vacuum method for fabrication of a photovoltaic absorber layer
- 专利标题（中）： 用于制造光伏吸收层的非真空方法
-
申请号： US13198744申请日： 2011-08-05
-
公开(公告)号： US08748216B2公开(公告)日： 2014-06-10
- 发明人: Wei Guo , Yu Jin , Bing Liu , Yong Che , Kevin V. Hagedorn
- 申请人： Wei Guo , Yu Jin , Bing Liu , Yong Che , Kevin V. Hagedorn
- 申请人地址： US MI Ann Arbor
- 专利权人： IMRA America, Inc.
- 当前专利权人： IMRA America, Inc.
- 当前专利权人地址： US MI Ann Arbor
- 代理机构： Dickinson Wright PLLC
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/032
摘要：
The present invention provides a non-vacuum method of depositing a photovoltaic absorber layer based on electrophoretic deposition of a mixture of nanoparticles with a controlled atomic ratio between the elements. The nanoparticles are first dispersed in a liquid medium to form a colloidal suspension and then electrophoretically deposited onto a substrate to form a thin film photovoltaic absorber layer. The absorber layer may be subjected to optional post-deposition treatments for photovoltaic absorption.
公开/授权文献
信息查询
IPC分类:
