发明授权
- 专利标题: Microwave plasma apparatus and method for materials processing
- 专利标题(中): 微波等离子体装置及材料加工方法
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申请号: US12015842申请日: 2008-01-17
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公开(公告)号: US08748785B2公开(公告)日: 2014-06-10
- 发明人: Eric Jordan , Baki M. Cetegen , Kamal Hadidi , Paul Woskov
- 申请人: Eric Jordan , Baki M. Cetegen , Kamal Hadidi , Paul Woskov
- 申请人地址: US CT Storrs US CT Farmington
- 专利权人: Amastan LLC,University of Connecticut
- 当前专利权人: Amastan LLC,University of Connecticut
- 当前专利权人地址: US CT Storrs US CT Farmington
- 代理机构: McCormick, Paulding & Huber LLP
- 主分类号: H05B6/70
- IPC分类号: H05B6/70 ; B23K10/00
摘要:
A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices.
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