Invention Grant
US08748949B2 Chip package with heavily doped region and fabrication method thereof
有权
具有重掺杂区域的芯片封装及其制造方法
- Patent Title: Chip package with heavily doped region and fabrication method thereof
- Patent Title (中): 具有重掺杂区域的芯片封装及其制造方法
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Application No.: US12940607Application Date: 2010-11-05
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Publication No.: US08748949B2Publication Date: 2014-06-10
- Inventor: Chien-Hung Liu , Cheng-Te Chou
- Applicant: Chien-Hung Liu , Cheng-Te Chou
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/70 ; H01L29/40

Abstract:
The invention provides a chip package and fabrication method thereof. In one embodiment, the chip package includes: a semiconductor substrate having opposite first and second surfaces, at least one bond pad region and at least one device region; a plurality of conductive pad structures disposed on the bond pad region at the first surface of the semiconductor substrate; a plurality of heavily doped regions isolated from one another, underlying and electrically connected to the conductive pad structures; and a plurality of conductive bumps underlying the heavily doped regions and electrically connected to the conductive pad structures through the heavily-doped regions.
Public/Granted literature
- US20110042807A1 CHIP PACKAGE AND FABRICATION METHOD THEREOF Public/Granted day:2011-02-24
Information query
IPC分类: