Invention Grant
US08748949B2 Chip package with heavily doped region and fabrication method thereof 有权
具有重掺杂区域的芯片封装及其制造方法

Chip package with heavily doped region and fabrication method thereof
Abstract:
The invention provides a chip package and fabrication method thereof. In one embodiment, the chip package includes: a semiconductor substrate having opposite first and second surfaces, at least one bond pad region and at least one device region; a plurality of conductive pad structures disposed on the bond pad region at the first surface of the semiconductor substrate; a plurality of heavily doped regions isolated from one another, underlying and electrically connected to the conductive pad structures; and a plurality of conductive bumps underlying the heavily doped regions and electrically connected to the conductive pad structures through the heavily-doped regions.
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