Invention Grant
US08748996B2 Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations
有权
包括具有不同氮浓度的部分的SiON栅极电介质的半导体器件
- Patent Title: Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations
- Patent Title (中): 包括具有不同氮浓度的部分的SiON栅极电介质的半导体器件
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Application No.: US13862581Application Date: 2013-04-15
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Publication No.: US08748996B2Publication Date: 2014-06-10
- Inventor: James Joseph Chambers , Hiroaki Niimi , Brian Keith Kirkpatrick
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
An integrated circuit (IC) includes a substrate having a top semiconductor surface including at least one MOS device including a source and a drain region spaced apart to define a channel region. A SiON gate dielectric layer that has a plurality of different N concentration portions is formed on the top semiconductor surface. A gate electrode is on the SiON layer. The plurality of different N concentration portions include (i) a bottom portion extending to the semiconductor interface having an average N concentration of 10 atomic %, and (iii) a top portion on the bulk portion extending to a gate electrode interface having an average N concentration that is ≧2 atomic % less than a peak N concentration of the bulk portion.
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