公开(公告)号：US09431509B2

公开(公告)日：2016-08-30

申请号：US14142323

申请日：2013-12-27

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L29/51 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

Abstract: An integrated circuit containing metal replacement gates may be formed by forming a nitrogen-rich titanium-based barrier between a high-k gate dielectric layer and a metal work function layer of a PMOS transistor. The nitrogen-rich titanium-based barrier is less than 1 nanometer thick and has an atomic ratio of titanium to nitrogen of less than 43:57. The nitrogen-rich titanium-based barrier may be formed by forming a titanium based layer over the gate dielectric layer and subsequently adding nitrogen to the titanium based layer. The metal work function layer is formed over the nitrogen-rich titanium-based barrier.

Abstract translation: 可以通过在高k栅介质层和PMOS晶体管的金属功函数层之间形成富氮钛基阻挡层来形成包含金属替换栅的集成电路。 富氮钛基阻挡层小于1纳米厚，钛与氮的原子比小于43:57。 可以通过在栅极电介质层上形成钛基层并随后将氮添加到钛基层来形成富氮钛基阻挡层。 在富氮钛基屏障上形成金属功函数层。

公开(公告)号：US20140120668A1

公开(公告)日：2014-05-01

申请号：US14146095

申请日：2014-01-02

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/3221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/11 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.

Abstract translation: 公开了一种用于在PMOS金属栅中的氧和NMOS栅极中的金属原子富集的NMOS和PMOS晶体管形成金属替代栅极的工艺，使得PMOS栅极具有高于4.85eV的有效功函数，并且NMOS栅极具有以下有效的功函数 4.25 eV。 NMOS和PMOS栅极中的金属功函数层被氧化，以将它们的有效功函数增加到期望的PMOS范围。 在PMOS栅极上形成氧扩散阻挡层，在NMOS栅极上形成氧吸气剂。 吸气剂退火从NMOS功能层提取氧气，并将金属原子富集添加到NMOS功能层，将其有效功函数降低到所需的NMOS范围。 公开了金属加工功能层的工艺和材料，氧化工艺和吸氧剂。

公开(公告)号：US08748996B2

公开(公告)日：2014-06-10

申请号：US13862581

申请日：2013-04-15

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi ,  Brian Keith Kirkpatrick

IPC: H01L21/02

CPC classification number: H01L29/78 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518

Abstract: An integrated circuit (IC) includes a substrate having a top semiconductor surface including at least one MOS device including a source and a drain region spaced apart to define a channel region. A SiON gate dielectric layer that has a plurality of different N concentration portions is formed on the top semiconductor surface. A gate electrode is on the SiON layer. The plurality of different N concentration portions include (i) a bottom portion extending to the semiconductor interface having an average N concentration of 10 atomic %, and (iii) a top portion on the bulk portion extending to a gate electrode interface having an average N concentration that is ≧2 atomic % less than a peak N concentration of the bulk portion.

Abstract translation: 集成电路（IC）包括具有顶部半导体表面的衬底，该顶部半导体表面包括至少一个MOS器件，其包括间隔开的源极和漏极区域以限定沟道区域。 在顶部半导体表面上形成具有多个不同N个浓度部分的SiON栅介质层。 栅电极位于SiON层上。 多个不同的N个浓度部分包括（i）平均N浓度<2原子％延伸到半导体界面的底部，（ii）平均N浓度> 10原子％的本体部分，和（iii） 本体部分的顶部延伸到具有比本体部分的峰值N浓度小2％原子％的平均N浓度的栅电极界面。

公开(公告)号：US08658489B2

公开(公告)日：2014-02-25

申请号：US13968074

申请日：2013-08-15

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi

IPC: H01L21/8238

CPC classification number: H01L21/283 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: A CMOS device having an NMOS transistor with a metal gate electrode comprising a mid-gap metal with a low work function/high oxygen affinity cap and a PMOS transistor with a metal gate electrode comprising a mid gap metal with a high work function/low oxygen affinity cap and method of forming.

Abstract translation: 一种具有NMOS晶体管的CMOS器件，其具有包括具有低功函数/高氧亲和性帽的中间间隙金属的金属栅极和具有金属栅电极的PMOS晶体管，该金属栅电极包括具有高功函数/低氧的中间间隙金属 亲和帽和成型方法。

公开(公告)号：US10068983B2

公开(公告)日：2018-09-04

申请号：US15222262

申请日：2016-07-28

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L29/49 ,  H01L29/51 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L29/08

Abstract: An integrated circuit containing metal replacement gates may be formed by forming a nitrogen-rich titanium-based barrier between a high-k gate dielectric layer and a metal work function layer of a PMOS transistor. The nitrogen-rich titanium-based barrier is less than 1 nanometer thick and has an atomic ratio of titanium to nitrogen of less than 43:57. The nitrogen-rich titanium-based barrier may be formed by forming a titanium based layer over the gate dielectric layer and subsequently adding nitrogen to the titanium based layer. The metal work function layer is formed over the nitrogen-rich titanium-based barrier.

公开(公告)号：US20140183653A1

公开(公告)日：2014-07-03

申请号：US14142323

申请日：2013-12-27

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L29/51 ,  H01L27/092 ,  H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

Abstract: An integrated circuit containing metal replacement gates may be formed by forming a nitrogen-rich titanium-based barrier between a high-k gate dielectric layer and a metal work function layer of a PMOS transistor. The nitrogen-rich titanium-based barrier is less than 1 nanometer thick and has an atomic ratio of titanium to nitrogen of less than 43:57. The nitrogen-rich titanium-based barrier may be formed by forming a titanium based layer over the gate dielectric layer and subsequently adding nitrogen to the titanium based layer. The metal work function layer is formed over the nitrogen-rich titanium-based barrier.

Abstract translation: 可以通过在高k栅介质层和PMOS晶体管的金属功函数层之间形成富氮钛基阻挡层来形成包含金属替换栅的集成电路。 富氮钛基阻挡层小于1纳米厚，钛与氮的原子比小于43:57。 可以通过在栅极电介质层上形成钛基层并随后将氮添加到钛基层来形成富氮钛基阻挡层。 在富氮钛基屏障上形成金属功函数层。

公开(公告)号：US20130337656A1

公开(公告)日：2013-12-19

申请号：US13968074

申请日：2013-08-15

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi

IPC: H01L21/283

CPC classification number: H01L21/283 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: A CMOS device having an NMOS transistor with a metal gate electrode comprising a mid-gap metal with a low work function/high oxygen affinity cap and a PMOS transistor with a metal gate electrode comprising a mid gap metal with a high work function/low oxygen affinity cap and method of forming.

Abstract translation: 一种具有NMOS晶体管的CMOS器件，其具有包括具有低功函数/高氧亲和性帽的中间间隙金属的金属栅极和具有金属栅电极的PMOS晶体管，该金属栅电极包括具有高功函数/低氧的中间间隙金属 亲和帽和成型方法。

公开(公告)号：US20170301774A1

公开(公告)日：2017-10-19

申请号：US15636233

申请日：2017-06-28

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/66545 ,  H01L21/02244 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.

公开(公告)号：US09397009B2

公开(公告)日：2016-07-19

申请号：US14739681

申请日：2015-06-15

Applicant: Texas Instruments Incorporated

Inventor： James Joseph Chambers ,  Hiroaki Niimi

IPC: H01L21/3205 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L21/322 ,  H01L29/40 ,  H01L29/423 ,  H01L27/092 ,  H01L27/11

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/3221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/11 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.

公开(公告)号：US20160042953A1

公开(公告)日：2016-02-11

申请号：US14923035

申请日：2015-10-26

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  James Joseph Chambers

IPC: H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L21/02244 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.

Abstract translation: 公开了一种用于在金属栅极中用氧形成PMOS晶体管的金属替代栅极的工艺，使得PMOS栅极具有高于4.85的有效功函数。 PMOS栅极中的金属功函数层在低温下被氧化，以将它们的有效功函数增加到期望的PMOS范围。 氢也可以并入在金属栅极和下面的栅极电介质之间的界面处。 公开了用于金属加工功能层的材料和用于低温氧化的方法。