发明授权
US08753936B2 Changing effective work function using ion implantation during dual work function metal gate integration
有权
在双功能金属门集成中,使用离子注入来改变有效的功函数
- 专利标题: Changing effective work function using ion implantation during dual work function metal gate integration
- 专利标题(中): 在双功能金属门集成中,使用离子注入来改变有效的功函数
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申请号: US12190220申请日: 2008-08-12
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公开(公告)号: US08753936B2公开(公告)日: 2014-06-17
- 发明人: Michael P. Chudzik , Martin M. Frank , Herbert L. Ho , Mark J. Hurley , Rashmi Jha , Naim Moumen , Vijay Narayanan , Dae-Gyu Park , Vamsi K. Paruchuri
- 申请人: Michael P. Chudzik , Martin M. Frank , Herbert L. Ho , Mark J. Hurley , Rashmi Jha , Naim Moumen , Vijay Narayanan , Dae-Gyu Park , Vamsi K. Paruchuri
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 Joseph J. Petrokaitis
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.