Invention Grant
- Patent Title: Vapor deposition reactor and method for forming thin film
- Patent Title (中): 蒸镀反应器及薄膜形成方法
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Application No.: US12794209Application Date: 2010-06-04
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Publication No.: US08758512B2Publication Date: 2014-06-24
- Inventor: Sang In Lee
- Applicant: Sang In Lee
- Applicant Address: US CA Fremont
- Assignee: Veeco ALD Inc.
- Current Assignee: Veeco ALD Inc.
- Current Assignee Address: US CA Fremont
- Agency: Fenwick & West LLP
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.
Public/Granted literature
- US20100310771A1 VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM Public/Granted day:2010-12-09
Information query
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