发明授权
- 专利标题: Photoelectrochemical cell and energy system using the same
- 专利标题(中): 光电化学电池和能量系统使用相同
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申请号: US13260825申请日: 2010-08-05
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公开(公告)号: US08758578B2公开(公告)日: 2014-06-24
- 发明人: Takaiki Nomura , Takahiro Suzuki , Nobuhiro Miyata , Kazuhito Hato
- 申请人: Takaiki Nomura , Takahiro Suzuki , Nobuhiro Miyata , Kazuhito Hato
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: Hamre, Schumann, Mueller & Larson, P.C.
- 优先权: JP2009-182879 20090805
- 国际申请: PCT/JP2010/004942 WO 20100805
- 国际公布: WO2011/016244 WO 20110210
- 主分类号: C25B9/00
- IPC分类号: C25B9/00 ; C25B9/06 ; C25B11/00 ; C25B11/04 ; C25B9/16 ; C25B9/12
摘要:
A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). In the semiconductor electrode (120), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (124) is higher than the Fermi level of the first n-type semiconductor layer (122). The photoelectrochemical cell (100) generates hydrogen by irradiation of the second n-type semiconductor layer (123) with light.
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