Invention Grant
- Patent Title: Memory with a read-only EEPROM-type structure
- Patent Title (中): 具有只读EEPROM类型结构的存储器
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Application No.: US12990682Application Date: 2009-05-12
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Publication No.: US08759898B2Publication Date: 2014-06-24
- Inventor: Pascal Fornara
- Applicant: Pascal Fornara
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR0853069 20080513
- International Application: PCT/FR2009/050868 WO 20090512
- International Announcement: WO2009/147347 WO 20091210
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A non-volatile memory including at least first and second memory cells each including a storage MOS transistor with dual gates and an insulation layer provided between the two gates. The insulation layer of the storage transistor of the second memory cell includes at least one portion that is less insulating than the insulation layer of the storage transistor of the first memory cell.
Public/Granted literature
- US20110108902A1 MEMORY WITH A READ-ONLY EEPROM-TYPE STRUCTURE Public/Granted day:2011-05-12
Information query
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