发明授权
- 专利标题： Solid-state imaging device, manufacturing method therefor, solid-state imaging apparatus, and image capturing apparatus
- 专利标题（中）： 固态成像装置及其制造方法，固体摄像装置和摄像装置
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申请号： US13154004申请日： 2011-06-06
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公开(公告)号： US08760545B2公开(公告)日： 2014-06-24
- 发明人: Kaori Takimoto
- 申请人： Kaori Takimoto
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2010-153640 20100706
- 主分类号： H04N3/14
- IPC分类号： H04N3/14 ; H04N5/335 ; H01L27/148 ; H01L21/00
摘要：
A solid-state imaging device includes: a semiconductor substrate that has a light sensing portion which photoelectrically converts incident light; an infrared cut filter layer or a light shielding layer that is provided on a surface side opposite to a light receiving surface of the semiconductor substrate and is formed on substantially the entire surface of an area corresponding to an area in which the light sensing portion of the semiconductor substrate is formed; and a wiring layer that is provided on an upper layer of the infrared cut filter layer or the light shielding layer.
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