发明授权
- 专利标题: Sub-resolution rod in the transition region
- 专利标题(中): 分解杆在过渡区域
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申请号: US12940230申请日: 2010-11-05
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公开(公告)号: US08765329B2公开(公告)日: 2014-07-01
- 发明人: Jeng-Shiun Ho , Luke Lo , Ting-Chun Liu , Min-Hung Cheng , Jing-Wei Shih , Wen-Han Chu , Cheng-Cheng Kuo , Hua-Tai Lin , Tsai-Sheng Gau , Ru-Gun Liu , Yu-Hsiang Lin , Shang-Yu Huang
- 申请人: Jeng-Shiun Ho , Luke Lo , Ting-Chun Liu , Min-Hung Cheng , Jing-Wei Shih , Wen-Han Chu , Cheng-Cheng Kuo , Hua-Tai Lin , Tsai-Sheng Gau , Ru-Gun Liu , Yu-Hsiang Lin , Shang-Yu Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G03F1/36
- IPC分类号: G03F1/36
摘要:
The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.
公开/授权文献
- US20120115073A1 SUB-RESOLUTION ROD IN THE TRANSITION REGION 公开/授权日:2012-05-10