发明授权
- 专利标题： Buffer bilayers for electronic devices
- 专利标题（中）： 电子设备缓冲层双层
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申请号： US12645634申请日： 2009-12-23
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公开(公告)号： US08766239B2公开(公告)日： 2014-07-01
- 发明人: Chi Zhang , Che-Hsiung Hsu
- 申请人： Chi Zhang , Che-Hsiung Hsu
- 申请人地址： US DE Wilmington
- 专利权人： E I du Pont de Nemours and Company
- 当前专利权人： E I du Pont de Nemours and Company
- 当前专利权人地址： US DE Wilmington
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.
公开/授权文献
- US20100213446A1 BUFFER BILAYERS FOR ELECTRONIC DEVICES 公开/授权日：2010-08-26
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