发明授权
- 专利标题: Integrated circuit capacitors having sidewall supports
- 专利标题(中): 具有侧壁支撑件的集成电路电容器
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申请号: US13356032申请日: 2012-01-23
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公开(公告)号: US08766343B2公开(公告)日: 2014-07-01
- 发明人: Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
- 申请人: Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, PA
- 优先权: KR10-2009-0130973 20091224; KR10-2010-0002838 20100112
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/94
摘要:
In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.
公开/授权文献
- US20120112317A1 INTEGRATED CIRCUIT CAPACITORS HAVING SIDEWALL SUPPORTS 公开/授权日:2012-05-10