发明授权
- 专利标题: Semiconductor structure and method for manufacturing the same
- 专利标题(中): 半导体结构及其制造方法
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申请号: US13256866申请日: 2011-02-25
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公开(公告)号: US08766371B2公开(公告)日: 2014-07-01
- 发明人: Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
- 申请人: Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
- 申请人地址: CN Beijing
- 专利权人: Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人: Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址: CN Beijing
- 代理机构: Troutman Sanders LLP
- 优先权: CN201010215163 20100622
- 国际申请: PCT/CN2011/071318 WO 20110225
- 国际公布: WO2011/160463 WO 20111229
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
There is provided a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention comprises: a semiconductor substrate; a channel region formed on the semiconductor substrate; a gate stack formed on the channel region; and source/drain regions formed on both sides of the channel region and embedded in the semiconductor substrate. The gate stack comprises: a gate dielectric layer formed on the channel region; and a conductive layer positioned on the gate dielectric layer. For an nMOSFET, the conductive layer has a compressive stress to apply a tensile stress to the channel region; and for a pMOSFET, the conductive layer has a tensile stress to apply a compressive stress to the channel region.