Invention Grant
US08766372B2 Copper-filled trench contact for transistor performance improvement
有权
用于晶体管性能改善的铜填充沟槽接触
- Patent Title: Copper-filled trench contact for transistor performance improvement
- Patent Title (中): 用于晶体管性能改善的铜填充沟槽接触
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Application No.: US13569150Application Date: 2012-08-07
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Publication No.: US08766372B2Publication Date: 2014-07-01
- Inventor: Kelin J. Kuhn , Kaizad Mistry , Mark Bohr , Chris Auth
- Applicant: Kelin J. Kuhn , Kaizad Mistry , Mark Bohr , Chris Auth
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The substrate further includes a conductive surface. A dielectric layer is formed over the substrate and has an opening exposing the conductive surface. The opening extends an entire length of the semiconductor device, partway down the entire length of the device, extending from the device onto adjacent field of the device, or and a combination thereof. A barrier layer is formed within the opening. A copper containing material fills the opening to form a first contact to the semiconductor device.
Public/Granted literature
- US20120299069A1 COPPER-FILLED TRENCH CONTACT FOR TRANSISTOR PERFORMANCE IMPROVEMENT Public/Granted day:2012-11-29
Information query
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