Invention Grant
- Patent Title: Protective structure
- Patent Title (中): 防护结构
-
Application No.: US14011885Application Date: 2013-08-28
-
Publication No.: US08766415B2Publication Date: 2014-07-01
- Inventor: Andre Schmenn , Damian Sojka , Carsten Ahrens
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102007024355 20070524
- Main IPC: H01L31/075
- IPC: H01L31/075 ; H01L31/105 ; H01L31/117
Abstract:
A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone.
Public/Granted literature
- US20130341771A1 PROTECTIVE STRUCTURE Public/Granted day:2013-12-26
Information query
IPC分类:
