Invention Grant
- Patent Title: Non-volatile memory apparatus and methods
- Patent Title (中): 非易失性存储装置及方法
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Application No.: US13862999Application Date: 2013-04-15
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Publication No.: US08767472B2Publication Date: 2014-07-01
- Inventor: Paul D. Ruby
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C16/10 ; G11C16/26 ; G11C16/04 ; G11C16/34
Abstract:
Some embodiments include apparatus and methods having memory cells coupled in series and a module to cause an application of voltages with at least three different values to gates of the memory cells during an operation to retrieve information stored in at least one of the memory cells. Additional apparatus and methods are described.
Public/Granted literature
- US20130223153A1 NON-VOLATILE MEMORY APPARATUS AND METHODS Public/Granted day:2013-08-29
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