发明授权
US08767918B2 X-ray scattering measurement device and X-ray scattering measurement method
有权
X射线散射测定装置和X射线散射测定方法
- 专利标题: X-ray scattering measurement device and X-ray scattering measurement method
- 专利标题(中): X射线散射测定装置和X射线散射测定方法
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申请号: US13266842申请日: 2010-04-14
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公开(公告)号: US08767918B2公开(公告)日: 2014-07-01
- 发明人: Kazuhiko Omote , Boris Verman , Licai Jiang
- 申请人: Kazuhiko Omote , Boris Verman , Licai Jiang
- 申请人地址: JP Tokyo
- 专利权人: Rigaku Corporation
- 当前专利权人: Rigaku Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2009-110657 20090430
- 国际申请: PCT/JP2010/056642 WO 20100414
- 国际公布: WO2010/125913 WO 20101104
- 主分类号: G21K1/06
- IPC分类号: G21K1/06 ; G01N23/201
摘要:
A X-ray scattering measurement device and measurement method can measure, with high resolution, the intensity of X-rays which have undergone small-angle scattering and diffraction with reflection geometry and can easily and accurately measure a microstructure on the surface of a sample. The X-ray scattering measurement device is suitable for microstructural measurement on the surface of a sample includes an X-ray source that generates an X-ray; a first mirror and a second mirror that continuously reflect the generated X-ray; a sample stage that supports the sample; and a two-dimensional detector that detects the X-ray scattered on the surface of the sample. The first mirror focuses the generated X-ray onto the two-dimensional detector within a plane parallel to the surface of the sample, and the second mirror focuses the X-ray reflected by the first mirror onto the surface of the sample within a plane perpendicular to the surface of the sample.